unisonic technologies co., ltd UP2003 power mosfet www.unisonic.com.tw 1 of 5 copyright ? 2008 unisonic technologies co., ltd qw-r502-202.b p-channel logic level enhancement mode field effect transistor ? description the UP2003 uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with low gate voltages. this device is suitable fo r use as a load switch or in pwm applications. ? features * v ds (v)=-25v * i d =-9 a * r ds(on) <35 m ? @ v gs =-4.5 v, i d =-7 a * r ds(on) <20 m ? @ v gs =-10 v, i d =-9 a ? symbol 1.gate 3.source 2.drain *pb-free plating product number: UP2003l ? ordering information ordering number pin assignment normal lead free plating package 1 2 3 packing UP2003-tn3-r UP2003l-tn3-r to-252 g d s tape reel UP2003-tn3-t UP2003l-tn3-t to-252 g d s tube www..net
UP2003 power mosfet unisonic technologies co., ltd 2 of 5 www.unisonic.com.tw qw-r502-202.b ? absolute maximum ratings (t c = 25c, unless otherwise specified) parameter symbol ratings unit gate source voltage v gss 20 v continuous drain current i d -9 pulsed drain current (note 1) i dm -50 a power dissipation p d 2.5 w junction temperature t j +150 storage temperature t stg -55 ~ +150 c note: absolute maximum ratings are those values be yond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and function al device operation is not implied. ? thermal data parameter symbol min typ max unit junction-to-ambient ja 50 c/w junction-to-case jc 25 c/w ? electrical characteristics (t c =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0 v, i d =-250a -25 v v ds =-24 v, v gs =0 v -1 drain source leakage current i dss v ds =-20 v, v gs =0 v -10 a gate-body leakage current i gss v ds =0 v, v gs =20v 100 na on characteristics gate-threshold voltage v gs(th) v ds =v gs , i d =-250 a -1.0 -1.5 -3.0 v on-state drain current (note 2) i d(on) v ds = -5v, v gs = -10v -50 a v gs =-4.5 v, i d =-7 a 25 35 drain-source on-resistance (note 2) r ds(on) v gs =-10 v, i d =-9 a 15 20 m ? dynamic parameters input capacitance c iss 1610 output capacitance c oss 410 reverse transfer capacitance c rss v ds =-15 v, v gs =0v, f=1mhz 200 pf switching parameters (note 3) gate to source charge q g 17 24 gate charge at threshold q gs 5 gate to drain charge q gd v ds =-0.5v (br)dss , v gs =-10 v, i d =-9 a 6 nc turn-on delay time t d(on) 6.2 9.3 turn-on rise time t r 10 turn-off delay time t d(off) 18 turn-on delay time t d(on) 10 turn-off fall-time t f v ds =-15v, i d -1a, v gs =-10v, r gs =6 ? ,r l =1 ? 5 ns source- drain diode ratings and characteristics diode continuous forward current i s -2.1 diode pulse current (note 1) i sm -4 a forward voltage (note 2) v sd i f =i s , v gs =0 v -1.2 v note: 1. pulse width limited by maximum junction temperature. 2. pulse test: pulse width 300 sec, duty cycle 2% 3. independent of oper ating temperature.
UP2003 power mosfet unisonic technologies co., ltd 3 of 5 www.unisonic.com.tw qw-r502-202.b ? typical characteristics drain current,-i d (a) drain current,-i d (a) 1.6 1.4 1.2 1 0.8 0 25 50 75 100 125 150 175 0 2.4 junction temperature ( ) on-resistance vs. junction temperature normalized drain to source on-resistance, r ds(on) (m ? ) drain current,-i d (a) on-resistance vs. drain current and gate voltage v gs =-3.5v -4.0v -4.5v -5v -6v -7v -10v 10 20 30 40 50 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 normalized drain to source on-resistance, r ds(on) (m ? ) i d =-9a v gs =-10v 0.6 -25 -50 drain to source on-resistance, r ds(on) (m ) reverse drain current,-i s (a)
UP2003 power mosfet unisonic technologies co., ltd 4 of 5 www.unisonic.com.tw qw-r502-202.b ? typical characteristics(cont.) 12 6 0 0 2 4 6 8 2500 500 0 0 5 10 15 20 gate to source voltage,-v gs (v) gate charge,-q g (nc) gate-charge characteristics capacitance characteristics c a p a c i t a n c e ( p f ) drain to source voltage,-v ds (v) i d =-9a v ds =-5v -10v -15v 10 18 24 30 c iss c oss c rss f=1mh z v gs =0v 25 30 2000 1500 1000 50 30 20 0 0.001 0.01 0.1 1 10 100 1000 100 10 1 0.1 0.1 1 10 100 pulse width (s) single pulse maximum power dissipationg drain to source voltage,-v ds (v) maximum safe operating area 100 s 1ms 10ms 100ms 1s 10s dc r ds(on) limited v gs =-10v single pulse ja =125 /w t a =25 0.01 single pulse ja =125 /w t a =25 10 40 normalized effective transient thermal resistance,r(t)
UP2003 power mosfet unisonic technologies co., ltd 5 of 5 www.unisonic.com.tw qw-r502-202.b utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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